Titlebook: Metal Impurities in Silicon-Device Fabrication; Klaus Graff Book 19951st edition Springer-Verlag Berlin Heidelberg 1995 Scandium.Tantal.ch

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Properties of the Main Impurities,s of transition-metal impurities in silicon. Therefore, our knowledge of the impurity contamination and of its distribution on wafer surfaces has considerably increased. As a consequence, a number of contamination sources in device manufacturing could be eliminated. The purity of the wafers before a

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Properties of Rare Impurities,occasionally occur due to new methods applied in production lines or for defect analysis. The respective knowledge on such properties originates from intentional impurity contamination and diffusions. The intentional doping was performed mainly to study the impurities’ electrical behavior and to det

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Detection Methods,. Corresponding reviews containing comprehensive information about analytical measurement methods already exist [6.1]. Frequently these methods are very involved and require a sophisticated handling by trained specialists. However, it seems useful to briefly discuss the methods which can be applied

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