Titlebook: Metal Impurities in Silicon-Device Fabrication; Klaus Graff Book 19951st edition Springer-Verlag Berlin Heidelberg 1995 Scandium.Tantal.ch

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Requirements of Modern Technology,k considerably. As a consequence, new specifications limiting the concentrations of impurities in device fabrication were set up concerning mainly the concentrations of iron, nickel, and copper. In order to control these new specifications the suppliers of polished wafers and their customers had to agree on suitable measurement techniques.

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0933-033X on. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity g

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Conclusion and Future Trends,ted which facilitates the use of the data for any application. Data which have been reported only once in the literature were omitted as well as many contradictory results if there is no reasonable explanation.

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