| 書(shū)目名稱(chēng) | Characterization of Crystal Growth Defects by X-Ray Methods | | 編輯 | Brian K. Tanner,D. Keith Bowen | | 視頻video | http://file.papertrans.cn/224/223987/223987.mp4 | | 叢書(shū)名稱(chēng) | NATO Science Series B: | | 圖書(shū)封面 |  | | 描述 | This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods‘ held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of t | | 出版日期 | Book 1980 | | 關(guān)鍵詞 | Aluminium; X-ray; crystal; diffraction; materials | | 版次 | 1 | | doi | https://doi.org/10.1007/978-1-4757-1126-4 | | isbn_softcover | 978-1-4757-1128-8 | | isbn_ebook | 978-1-4757-1126-4Series ISSN 0258-1221 | | issn_series | 0258-1221 | | copyright | Springer Science+Business Media New York 1980 |
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