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Titlebook: Characterization of Crystal Growth Defects by X-Ray Methods; Brian K. Tanner,D. Keith Bowen Book 1980 Springer Science+Business Media New

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書目名稱Characterization of Crystal Growth Defects by X-Ray Methods
編輯Brian K. Tanner,D. Keith Bowen
視頻videohttp://file.papertrans.cn/224/223987/223987.mp4
叢書名稱NATO Science Series B:
圖書封面Titlebook: Characterization of Crystal Growth Defects by X-Ray Methods;  Brian K. Tanner,D. Keith Bowen Book 1980 Springer Science+Business Media New
描述This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods‘ held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of t
出版日期Book 1980
關(guān)鍵詞Aluminium; X-ray; crystal; diffraction; materials
版次1
doihttps://doi.org/10.1007/978-1-4757-1126-4
isbn_softcover978-1-4757-1128-8
isbn_ebook978-1-4757-1126-4Series ISSN 0258-1221
issn_series 0258-1221
copyrightSpringer Science+Business Media New York 1980
The information of publication is updating

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https://doi.org/10.1007/1-84628-139-3high. Those parameters sometimes are ill defined and they are dependent on one another. Besides, within the growth process must be included the initial phase of crystal generation, generally at high temperature, as well as the phase of cooling to room temperature as crystalline perfection is generally assessed at such temperature.
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https://doi.org/10.1007/978-1-4302-0502-9ial. The full range of wave length conditions accessible in the laboratory are covered by the techniques involving, say, characteristic K radiation (the Berg [1] — Barrett [2] technique, penetrating polychromatic radiation)the Schultz [3] technique), or, most sensitively, crystal monochromated radiation, say, as utilized by Bonse [4].
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Practical Prototype and script.aculo.usography using laboratory generators or monochromatized synchrotron radiation topography. The purpose of the present chapter is first to produce some guide lines which will help in promoting monochromatized synchrotron radiation topography and secondly to give typical examples of applications.
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