Titlebook: CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies; Process-Aware SRAM D Andrei Pavlov,Manoj Sachdev Book 2008 Spring

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Andrei Pavlov,Manoj SachdevGives a process-aware perspective on SRAM circuit design and test.Provides detailed coverage of SRAM cell stability, stability sensitivity and analytical evaluation of Static Noise Margin.Introduces t

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Buttress

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978-90-481-7855-1Springer Science+Business Media B.V. 2008

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CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies978-1-4020-8363-1Series ISSN 0929-1296

genesis

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Bing Zhou,Scott Han,Gabor A. Somorjaiyield constraints. Near minimumsize cell transistors exhibit higher susceptibility with respect to process variations. Thirdly, the cell layout largely determines the SRAM critical area, which is the chip yield limiter. Meeting the design constraints requires deeper understanding of the involved tra

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Surendra P. Shah,Pengkun Hou,Xin Chengole pairs to upset the storage nodes of SRAM cells. Such an upset is called a .. While such an upset can cause a data error, the device structures are not permanently damaged. If the voltage disturbance on a storage node of an SRAM cell is smaller than the noise margin of that node, the cell will co

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SRAM Cell Stability: Definition, Modeling and Testing,

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Techniques for Detection of SRAM Cells with Stability Faults,