| 書目名稱 | CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies |
| 副標題 | Process-Aware SRAM D |
| 編輯 | Andrei Pavlov,Manoj Sachdev |
| 視頻video | http://file.papertrans.cn/221/220365/220365.mp4 |
| 概述 | Gives a process-aware perspective on SRAM circuit design and test.Provides detailed coverage of SRAM cell stability, stability sensitivity and analytical evaluation of Static Noise Margin.Introduces t |
| 叢書名稱 | Frontiers in Electronic Testing |
| 圖書封面 |  |
| 描述 | .CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies. covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies.. |
| 出版日期 | Book 2008 |
| 關(guān)鍵詞 | CMOS; DOM; RAM; SRAM; Transistor; integrated circuit; static-induction transistor |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-1-4020-8363-1 |
| isbn_softcover | 978-90-481-7855-1 |
| isbn_ebook | 978-1-4020-8363-1Series ISSN 0929-1296 |
| issn_series | 0929-1296 |
| copyright | Springer Science+Business Media B.V. 2008 |
|Archiver|手機版|小黑屋|
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