Titlebook: Atomic Layer Deposition for Semiconductors; Choel Seong Hwang Book 2014 Springer Science+Business Media New York 2014 ALD for mass-product

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Introduction ALD precursors are now known for most non-radioactive elements and many of them are commercially available. This review describes their chemical types, typical properties, and reactivity. Suitable pairs of precursors can deposit some pure elements, oxides of most elements, nitrides of many elements

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ALD Precursors and Reaction Mechanisms ALD precursors are now known for most non-radioactive elements and many of them are commercially available. This review describes their chemical types, typical properties, and reactivity. Suitable pairs of precursors can deposit some pure elements, oxides of most elements, nitrides of many elements

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Mass-Production Memories (DRAM and Flash)puting in any computer requires two key information sets; programs, and the data to program with. Both sets are stored as a form of ‘bits’ in the core memory part of a computer. Any computed output that comes from these actions is also stored as a data set within different parts of the memories that

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FeRAMost promising nonvolatile (NV) memory devices [., .]. Key parameters for the scaling of ferroelectric random access memories are shrinking of the feature size, reduction of operation voltage, and enhancement of voltage sensing. In this chapter, we will summarize several key technology issues which h

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Front End of the Line Processand the interface properties with a substrate, which determines the performance and reliability of logic devices. In this chapter, we review the effect of the assorted metal precursors, such as HfCl., (HfN(CH.).)., Hf(N(C.H.)(CH.))., and HfO.Bu(NEtMe). on the various film properties, focusing on the

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Back End of the Lined as a promising deposition technique, for sub-20?nm technology node logic device fabrication. Among various potential applications in logic device fabrication, the ability of ALD to deposit various metal and nitride films with high quality at low temperature makes it a viable deposition process for

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