Titlebook: Ultraclean Surface Processing of Silicon Wafers; Secrets of VLSI Manu Takeshi Hattori Book 1998 Springer-Verlag Berlin Heidelberg 1998 Tech

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978-3-642-08272-6Springer-Verlag Berlin Heidelberg 1998

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Particle Adhesion and Removal on Wafer Surfaces in RCA Cleaning) and the electrostatic force (the reciprocal action of an electrical double layer). Research related to the particle adhesion mechanism on wafer surfaces in solutions that conform to the above two actions has thrived in recent years, and has done much to clarify the particle adhesion mechanism [1–12].

敏捷

Effects of Electrostatic Charge on Particle Adhesion on Wafer Surfacesthe deposition of airborne particles due to static electricity, device defects due to static discharge, electron beam exposure time, etc., constitute electron orbit damage. These types of electrostatic damage have manifested themselves at extremely high rates accompanying the higher integration of circuitry.

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https://doi.org/10.1007/978-3-662-03535-1Technologie; VLSI; production; quality; semiconductor devices

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Particle Deposition in VacuumThe relationship between particles and wafers in a vacuum can be divided into the following three categories, which will be discussed along with countermeasures against particles:

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GROG

Influence of Metallic Contamination on Dielectric Degradation of MOS Structuresever, by using several kinds of intentional contamination experiments, it has been made clear that the mechanisms of dielectric degradation are generally classified into the five categories discussed in Sects. 4.1.1–4.1.5.