Titlebook: Ultraclean Surface Processing of Silicon Wafers; Secrets of VLSI Manu Takeshi Hattori Book 1998 Springer-Verlag Berlin Heidelberg 1998 Tech

HPA533

Influence of Silicon Crystal Quality on Device Characteristicsal raw material of the device, has been the object of vigorous research and development. Looking back at the evolution of this research, its goals have progressed from Si crystal growth to the treatment of those crystals, and from there to device processing, with the present emphasis on “cleanliness” and the “change to larger diameter”.

散步

decode

Influence of Silicon Crystal Quality on Device Characteristics and the foundation device of the modern LSI was constructed. Transistor development gradually shifted from the use of Ge crystals to Si crystals because, compared with Ge, Si provides the possibility of device operation at much higher temperatures, and promises much more stable operation. Further,

停止償付

Influence of Contaminants on Device Characteristicsluence of contamination on the semiconductor device, the present level of cleanliness, and future required levels remain unclear, and knowledge is still not shared between device, equipment, and materials manufacturers.

Pantry

Influence of Metallic Contamination on Dielectric Degradation of MOS Structuresal oxidation, just before gate oxidation, on the gate oxide film, or in the subsequent process steps); on the form of metallic contaminants such as ions, particles, or metal oxide; and on the condition of thermal processes (temperature, time, and ambient) of LSI fabrication. This dependency results

休戰(zhàn)

Tremor

贊美者

赤字

競(jìng)選運(yùn)動(dòng)

Particle Adhesion and Removal on Wafer Surfaces in RCA Cleaning) and the electrostatic force (the reciprocal action of an electrical double layer). Research related to the particle adhesion mechanism on wafer surfaces in solutions that conform to the above two actions has thrived in recent years, and has done much to clarify the particle adhesion mechanism [1–1