Titlebook: UV Solid-State Light Emitters and Detectors; Michael S. Shur,Artūras ?ukauskas Conference proceedings 2004 Springer Science+Business Media

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Promising Results of Plasma Assisted MBE for Optoelectronic Applications,loys, such as quaternary InAlGaN alloy thin films and quantum well heterostructures, have also been grown by PAMBE with good control of the In incorporation. The layers exhibited strong PL up to room temperature and lasing under optical pumping.

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Stimulated Emission and Gain in GaN Epilayers Grown on Si,ifetime resulting in difference in excited volume of the epitaxial layers. The net-gain spectra exhibited lower optical losses in structures containing the interlayer, apparently due to an improved waveguide structure.

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Basic Device Issues in UV Solid-State Emitters and Detectors,de heterostructures with a high aluminum molar fraction are becoming more formidable. The solutions to device problems lie in using better substrates (with bulk AlN substrates in non-polar orientations being especially promising), using better epitaxial growth techniques, improving device design and using better contact technology and design.

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Small Internal Electric Fields in Quaternary InAlGaN Heterostructures,series of samples. On the contrary, from the experimental results, we concluded that the built-in electric field is negligible in the samples of series A and is rather weak in those of series B. Possible reasons for the controversies between theory and experiment are suggested.

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