Titlebook: UV Solid-State Light Emitters and Detectors; Michael S. Shur,Artūras ?ukauskas Conference proceedings 2004 Springer Science+Business Media

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書目名稱UV Solid-State Light Emitters and Detectors影響因子(影響力)學(xué)科排名




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書目名稱UV Solid-State Light Emitters and Detectors被引頻次




書目名稱UV Solid-State Light Emitters and Detectors被引頻次學(xué)科排名




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書目名稱UV Solid-State Light Emitters and Detectors讀者反饋




書目名稱UV Solid-State Light Emitters and Detectors讀者反饋學(xué)科排名

強(qiáng)制令

Abrupt

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松緊帶

UV Metal Semiconductor Metal Detectors,lications require that UV detectors have a huge dynamic response between UV and the visible, and a very low dark current in the range of the UV flux measured. (Al,Ga)N alloys present a large direct bandgap in this range and therefore can be used as an active region in such detectors. To take advanta

白楊魚

Characterization of Advanced Materials for Optoelectronics by Using UV Lasers and Four-Wave Mixing ructures are presented. Carrier plasma parameters, such as carrier lifetimes and bipolar/monopolar diffusion coefficients as well as surface recombination velocities in heterostructures of GaN/sapphire, InGaN/GaN, CdTe/GaAs, ZnTe homoepitaxial structures, and heavily doped .-GaAs double heterostruct

Cloudburst

Quantum Phospors,es environmental problems and causes an undesired delay in lamp startup. If mercury is replaced by xenon, which is already gaseous at room temperature and harmless to the environment, both problems are solved. Xenon however emits at higher energy (.. = 172 nm) and the phosphors used in mercurybased

Chipmunk

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Novel Algan Heterostructures for UV Sensors and Leds,row-band UV sensors. Epitaxial heterostructures of n-type A1N on p-type diamond were grown by MBE and exhibit surprisingly good electronic properties, suggesting a possible application for future UV light-emitting diodes. Finally, the use of AlGaN/GaN heterostructures for biosensors is briefly discu