Titlebook: Rapid Thermal Processing of Semiconductors; Victor E. Borisenko,Peter J. Hesketh Book 1997 Springer Science+Business Media New York 1997 c

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書(shū)目名稱(chēng)Rapid Thermal Processing of Semiconductors影響因子(影響力)

書(shū)目名稱(chēng)Rapid Thermal Processing of Semiconductors影響因子(影響力)學(xué)科排名

書(shū)目名稱(chēng)Rapid Thermal Processing of Semiconductors網(wǎng)絡(luò)公開(kāi)度

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書(shū)目名稱(chēng)Rapid Thermal Processing of Semiconductors被引頻次

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書(shū)目名稱(chēng)Rapid Thermal Processing of Semiconductors讀者反饋

書(shū)目名稱(chēng)Rapid Thermal Processing of Semiconductors讀者反饋學(xué)科排名

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978-1-4899-1806-2Springer Science+Business Media New York 1997

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Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals,or in silicon are presented and discussed. In particular, the distinct features based on the nonequilibrium conditions created in RTP are emphasized. These phenomena have been investigated for the most part in the solid state for silicon.

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Rapid Thermal Oxidation and Nitridation,e oxide thickness decreases and the gate capacitance increases. In EEPROMs Fowler-Nordheim (FN) tunneling current, which is used to charge and discharge the gate of the memory cell, can slowly degrade the gate dielectric properties through trapped charges in the gate dielectric. The resultant shift

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