Titlebook: Rapid Thermal Processing of Semiconductors; Victor E. Borisenko,Peter J. Hesketh Book 1997 Springer Science+Business Media New York 1997 c

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Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals,studies using RTP have operated in the thermal flux or heat balance regimes (as defined in Section 1.1). Moreover, the heat balance regime is often preferred with incoherent light and for short heating times (seconds). Solid-state processes initiated in semiconductors by RTP are mainly of thermal or

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Crystallization, Impurity Diffusion, and Segregation in Polycrystalline Silicon,s, and interconnections where low sheet resistivity is important [1,2]. Heavily doped layers are also attractive as diffusion sources for doping the underlying substrate [3]. Finally, polysilicon has been recrystallized successfully into device-quality material for three-dimensional integrated circu

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,Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors,tegrated circuits [1, 2]. They have unique and promising optical and electrophysical properties compared to silicon and germanium. However, their utilization is limited by the dramatic influence that thermal processes employed during device fabrication have on these properties based on primarily the

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Rapid Thermal Chemical Vapor Deposition,f materials, the potential for further development is great. The earliest work was on single-crystal epitaxial silicon by Gibbons and colleagues [1] who referred to the process as limited reaction processing (LRP). One of the principal advantages of RTCVD is that sharp transitions are obtained betwe