Titlebook: Neutron Transmutation Doping in Semiconductors; Jon M. Meese Book 1979 Plenum Press, New York 1979 Potential.circuit.computer.energy.indus

FOLLY

用樹皮

Resistivity Fluctuations in Highly Compensated NTD Silicon000 Ω-cm. Calculations are also presented of the maximum possible mean resistivity obtainable before fluctuation induced type conversion occurs as a function of the initial starting material resistivity fluctuation.

Meager

Transistor Gain Trimming in I2L Integrated Circuits Using the NTD Processhow that a tenfold increase in substrate concentration increased inverse beta by a factor of approximately ten. Minority carrier diffusion length in the substrate was reduced from approximately 9 to 3 microns as a result of the irradiation. Overall results will be compared with I.L made on epitaxial substrates with comparable doping.

障礙物

Determination of the Neutron Flux and Energy Spectrum and Calculation of Primary Recoil and Damage-E. The significance of this information with respect to the interpretations of various neutron radiation damage experiments is discussed. A general observation about neutron radiation damage in silicon is also suggested.

GROSS

esoteric

間諜活動(dòng)

指令

Optimum

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