Titlebook: Neutron Transmutation Doping in Semiconductors; Jon M. Meese Book 1979 Plenum Press, New York 1979 Potential.circuit.computer.energy.indus

endarterectomy

BOOR

Resistivity Fluctuations in Highly Compensated NTD SiliconThese calculations are compared with experimental data taken on silicon which has been compensated by the NTD process to resistivities as high as 100,000 Ω-cm. Calculations are also presented of the maximum possible mean resistivity obtainable before fluctuation induced type conversion occurs as a f

偏狂癥

魯莽

Determination of the Neutron Flux and Energy Spectrum and Calculation of Primary Recoil and Damage-Emeans of a 20-foil activation technique. This technique employs the most recent version of the SAND-II computer code, which iteratively unfolds the neutron spectrum by fitting the foil activities. A Monte Carlo routine was also employed to calculate standard-deviation errors in each neutron-energy g

傻

Neutron Doping of Silicon in the Harwell Research Reactorsce 1975. Ton quantities of material have been irradiated for various customers and the high utilization of the two reactors, with their offset operating cycles, guarantees production throughout the entire year..The present facilities offer a capacity of some 15 tons of medium resistivity material pe

AGOG

languor

audiologist

榮幸

VOC

Atomic Displacement Effects in Neutron Transmutation Dopingransmutation doping. Recoiling atoms from fast neutron interactions are the dominant contribution to the energy available for producing atomic displacements. Energy deposition considerations indicate that defect clusters are created but amorphous zone formation is highly unlikely. Extensive defect r