Titlebook: Integrated Circuit Defect-Sensitivity: Theory and Computational Models; José Pineda Gyvez Book 1993 Springer Science+Business Media New Yo

FAULT

書目名稱Integrated Circuit Defect-Sensitivity: Theory and Computational Models影響因子(影響力)




書目名稱Integrated Circuit Defect-Sensitivity: Theory and Computational Models影響因子(影響力)學科排名




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書目名稱Integrated Circuit Defect-Sensitivity: Theory and Computational Models被引頻次




書目名稱Integrated Circuit Defect-Sensitivity: Theory and Computational Models被引頻次學科排名




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書目名稱Integrated Circuit Defect-Sensitivity: Theory and Computational Models年度引用學科排名




書目名稱Integrated Circuit Defect-Sensitivity: Theory and Computational Models讀者反饋




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混沌

Defect Semantics and Yield Modeling,luding the necessary relationship between process induced defects and faults[24,42,74,94].The second main topic is an objective discussion on yield modeling, it’s difficulties and development through the last 30 years.

才能

Introduction,it area (defect density). By understanding the effect of defects in IC designs, it is possible to devise yield tolerant methodologies, e.g. module allocation with “balanced defect sensitivities”, “defect tolerant” driven techniques for placement and routing, etc.

危險

銼屑

Single Defect Multiple Layer (SDML) Model, either a short or a break. Yet if the defect falls in the poly-diffusion area of a transistor it can be fatal even if it does not totally break the geometrical pattern. It is thus not sufficient to extract single-layer critical areas if either an accurate yield prediction or a realistic layout to fault extraction are desired.

RECUR

IC Yield Prediction and Single Layer Critical Areas,s implementing the same function. The layout styles are Standard Cells (STD), Programmable Logic Array (PLA), and Transistor Gate Matrix (TM), see Fig. 7.1. The technology is CMOS of 2μm of minimum resolution features.

CERE

災(zāi)禍

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