Titlebook: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion; Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanon Book 2018

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Considerations on Planning and Architecture,G in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally off operation are presented.

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https://doi.org/10.1007/978-3-319-77994-2Gallium Nitride; GaN device physics; GaN for Power Conversion; GaN transistors; GaN Reliability

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https://doi.org/10.1007/978-3-031-05469-3able to guarantee their reliability. In this chapter, we discuss how to evaluate the robustness of GaN power transistors. In the switching of GaN power transistors, they can be subject to the so-called current collapse that is a specific phenomenon for GaN in which the ON state resistance is increas

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https://doi.org/10.1007/978-1-4842-2102-0 power converters, and wireless power transfer (WPT) among myriad other applications. Advances in power semiconductor devices, magnetics, and circuit design are opening the door to much more efficient generation and delivery of power at radio frequencies. This chapter presents an overview of switche