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Titlebook: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion; Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanon Book 2018

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21#
發(fā)表于 2025-3-25 04:45:55 | 只看該作者
22#
發(fā)表于 2025-3-25 10:42:38 | 只看該作者
Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion978-3-319-77994-2Series ISSN 1558-9412 Series E-ISSN 1558-9420
23#
發(fā)表于 2025-3-25 14:50:40 | 只看該作者
24#
發(fā)表于 2025-3-25 16:42:31 | 只看該作者
Book 2018level, both for power conversions architectures and switched mode power amplifiers;.Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;.Enables design of smaller, cheaper and more efficient power supplies..
25#
發(fā)表于 2025-3-25 20:34:03 | 只看該作者
Torgeir Dings?yr,Tore Dyb?,Nils Brede Moegher) from a single chip for a rated voltage (1KV and higher) is a standard requirement. Particularly when the market is favorable toward electrification of cars and other means of transportations, GaN must expand its scope to provide high power solutions with higher power density compared to Si and
26#
發(fā)表于 2025-3-26 01:12:34 | 只看該作者
https://doi.org/10.1007/978-3-031-05469-3is crucially dependent on the drain current – voltage locus curve during the switching event, the switching reliability of GaN transistor depends on the switching locus. Accordingly a concept of Switching Safe Operating Area (SSOA) is proposed to define the switching conditions wherein the device ca
27#
發(fā)表于 2025-3-26 08:11:58 | 只看該作者
https://doi.org/10.1007/978-1-4842-2102-0t construction, including the design and application of passive components at radio frequencies. Magnetics for power applications at HF and VHF pose a special challenge when compactness and high efficiency are desired. We explore the design of air-core and magnetic-core magnetics for this frequency
28#
發(fā)表于 2025-3-26 09:16:19 | 只看該作者
29#
發(fā)表于 2025-3-26 14:00:24 | 只看該作者
Validating GaN Robustness,is crucially dependent on the drain current – voltage locus curve during the switching event, the switching reliability of GaN transistor depends on the switching locus. Accordingly a concept of Switching Safe Operating Area (SSOA) is proposed to define the switching conditions wherein the device ca
30#
發(fā)表于 2025-3-26 17:57:58 | 只看該作者
GaN in Switched-Mode Power Amplifiers,t construction, including the design and application of passive components at radio frequencies. Magnetics for power applications at HF and VHF pose a special challenge when compactness and high efficiency are desired. We explore the design of air-core and magnetic-core magnetics for this frequency
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