| 書目名稱 | Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion |
| 編輯 | Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanon |
| 視頻video | http://file.papertrans.cn/381/380405/380405.mp4 |
| 概述 | Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers.Demo |
| 叢書名稱 | Integrated Circuits and Systems |
| 圖書封面 |  |
| 描述 | .This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion..Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;.Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;.Enables design of smaller, cheaper and more efficient power supplies.. |
| 出版日期 | Book 2018 |
| 關(guān)鍵詞 | Gallium Nitride; GaN device physics; GaN for Power Conversion; GaN transistors; GaN Reliability |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-319-77994-2 |
| isbn_softcover | 978-3-030-08594-0 |
| isbn_ebook | 978-3-319-77994-2Series ISSN 1558-9412 Series E-ISSN 1558-9420 |
| issn_series | 1558-9412 |
| copyright | Springer International Publishing AG, part of Springer Nature 2018 |
|Archiver|手機(jī)版|小黑屋|
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