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Titlebook: Computer-Aided Design and VLSI Device Development; Kit Man Cham,Soo-Young Oh,John L. Moll Book 1986 Springer Science+Business Media New Yo

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發(fā)表于 2025-3-28 15:49:46 | 只看該作者
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發(fā)表于 2025-3-28 19:04:36 | 只看該作者
Harold Paredes-Frigolett,Andreas Pykafield in VLSI devices and the use of LDD device as a possible solution is discussed. The fabrication and simulation of LDD device is then described. Finally, the performance, characteristic, physics and design considerations of LDD devices are presented in detail.
43#
發(fā)表于 2025-3-29 01:18:54 | 只看該作者
44#
發(fā)表于 2025-3-29 05:59:36 | 只看該作者
Book 1986). The emphasis is in Metal-Oxide-Semiconductor (MOS) technology. State-of-the-art device and process development are presented. This book is intended as a reference for engineers involved in VLSI develop- ment who have to solve many device and process problems. CAD specialists will also find this b
45#
發(fā)表于 2025-3-29 07:40:21 | 只看該作者
46#
發(fā)表于 2025-3-29 14:09:10 | 只看該作者
Overviewe of the simple device structure. VLSI development for greater functional complexity and circuit performance on a single chip is strongly motivated by the reduced cost per device and has been achieved in part by larger chip areas, but predominantly by smaller device dimensions and the clever design of devices and circuits.
47#
發(fā)表于 2025-3-29 17:46:58 | 只看該作者
The Evolution of Development Thinkingechnologies. When coupled with a device analysis program, a process simulator has proven to be a powerful design tool because the process sensitivity to device parameters can be easily extracted by simple changes made to processing conditions in computer inputs. [2.1].
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發(fā)表于 2025-3-29 21:11:39 | 只看該作者
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發(fā)表于 2025-3-30 01:07:49 | 只看該作者
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