Titlebook: Computer-Aided Design and VLSI Device Development; Kit Man Cham,Soo-Young Oh,John L. Moll Book 1986 Springer Science+Business Media New Yo

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Enliven

Introduction to Numerical Simulation Systemons. In 1969, Barron [1.1] from Stanford University simulated a MOSFET transistor using a finite-difference method to study the subthreshold conduction and saturation mechanism. Vandorpe [1.2] also simulated and modeled the saturation region with the finite-difference program in 1972. After the self

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Process Simulatione such a complex process is no longer desirable because of the enormous cost and turn-around time. From this point of view, computer simulation is a cost-effective alternative, not only supplying a right answer for increasingly tight processing windows, but also serving as a tool to develop future t

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Transistor Design for Submicron CMOS Technologynology will first be discussed. Then the concerns for the design of n and p-channel MOSFETs with submicron channel lengths will be discussed. Using simulations, the values of the critical device parameters are determined which will minimize leakage problems in submicron transistors.

STANT

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A Study of LDD Device Structure Using 2-D Simulations illustrate the usefulness and necessity of using computer aided design tools in the fabrication of VLSI devices. First, the problem of high electric field in VLSI devices and the use of LDD device as a possible solution is discussed. The fabrication and simulation of LDD device is then described. F

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MOSFET Scaling by CADDETprocess of scaling. As pointed out in the overview chapter, the long channel relations are not strictly valid for horizontal dimensions that are comparable to the vertical dimensions. In this example, the operating voltage is kept constant. The horizontal dimension, .., and the vertical dimension, .