Titlebook: Computer-Aided Design and VLSI Device Development; Kit Man Cham,Soo-Young Oh,John L. Moll Book 1986 Springer Science+Business Media New Yo

只看該作者 · 發(fā)表于 2025-3-24 07:01:41

John T. Cannon,Sigalia DostrovskyTo simulate the parasitic capacitance/resistance, it is necessary to solve the Poisson (or Laplace) equation in at least two dimensions with arbitrary input geometry.

只看該作者 · 發(fā)表于 2025-3-24 12:30:30

Some Thoughts on Plan and MarketDrain-induced barrier lowering (DIBL)[7.1]-[7.6] has been studied by many workers.

只看該作者 · 發(fā)表于 2025-3-24 15:04:06

只看該作者 · 發(fā)表于 2025-3-24 22:09:29

Drain-Induced Barrier Lowering In Short Channel TransistorsDrain-induced barrier lowering (DIBL)[7.1]-[7.6] has been studied by many workers.

只看該作者 · 發(fā)表于 2025-3-25 02:25:38

		自動(dòng)登錄	找回密碼
密碼			To register

關(guān)于派博傳思			派博傳思旗下網(wǎng)站			友情鏈接
派博傳思介紹	公司地理位置	論文服務(wù)流程	影響因子官網(wǎng)	吾愛(ài)論文網(wǎng)	大講堂	北京大學(xué)	Oxford Uni.	Harvard Uni.
發(fā)展歷史沿革	期刊點(diǎn)評(píng)	投稿經(jīng)驗(yàn)總結(jié)	SCIENCEGARD	IMPACTFACTOR	派博系數(shù)	清華大學(xué)	Yale Uni.	Stanford Uni.
\|Archiver\|手機(jī)版\|小黑屋\| 派博傳思國(guó)際 ( 京公網(wǎng)安備110108008328) GMT+8, 2026-1-25 06:55
Copyright © 2001-2015 派博傳思京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved