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Titlebook: Computer-Aided Design and VLSI Device Development; Kit Man Cham,Soo-Young Oh,John L. Moll Book 1986 Springer Science+Business Media New Yo

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21#
發(fā)表于 2025-3-25 05:43:49 | 只看該作者
978-1-4612-9605-8Springer Science+Business Media New York 1986
22#
發(fā)表于 2025-3-25 07:57:24 | 只看該作者
23#
發(fā)表于 2025-3-25 13:04:23 | 只看該作者
24#
發(fā)表于 2025-3-25 18:08:12 | 只看該作者
The Evolution of Development Thinkinge such a complex process is no longer desirable because of the enormous cost and turn-around time. From this point of view, computer simulation is a cost-effective alternative, not only supplying a right answer for increasingly tight processing windows, but also serving as a tool to develop future t
25#
發(fā)表于 2025-3-25 22:14:04 | 只看該作者
The Evolution of Development Thinkingplanar, and the impurity profiles of the devices are complicated and may not be expressed accurately in Gaussian form. The increased complexity of the device structure is necessary for optimization of the device performance, such as minimizing the drain-induced barrier-lowering effects, or enhancing
26#
發(fā)表于 2025-3-26 02:46:45 | 只看該作者
Waves in Long-term Economic Development Hewlett-Packard Laboratories. In this chapter, CAD is discussed from the user point of view. The methodology for using the simulation tools in the most effective way is presented. Then case studies will be presented in the following chapters which show in detail how simulation tools are used in dev
27#
發(fā)表于 2025-3-26 06:40:58 | 只看該作者
28#
發(fā)表于 2025-3-26 11:47:16 | 只看該作者
Some Thoughts on Plan and Marketnology will first be discussed. Then the concerns for the design of n and p-channel MOSFETs with submicron channel lengths will be discussed. Using simulations, the values of the critical device parameters are determined which will minimize leakage problems in submicron transistors.
29#
發(fā)表于 2025-3-26 13:39:41 | 只看該作者
30#
發(fā)表于 2025-3-26 20:33:07 | 只看該作者
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