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Titlebook: Chemical-Mechanical Planarization of Semiconductor Materials; Michael R. Oliver (Rodel Fellow) Book 2004 Springer-Verlag Berlin Heidelberg

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發(fā)表于 2025-3-21 19:31:59 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Chemical-Mechanical Planarization of Semiconductor Materials
編輯Michael R. Oliver (Rodel Fellow)
視頻videohttp://file.papertrans.cn/225/224499/224499.mp4
概述Comprehensive book covering the technology of CMP for all semiconductor related materials, as well as.the science and modelling of the various mechanisms.Includes supplementary material:
叢書名稱Springer Series in Materials Science
圖書封面Titlebook: Chemical-Mechanical Planarization of Semiconductor Materials;  Michael R. Oliver (Rodel Fellow) Book 2004 Springer-Verlag Berlin Heidelberg
描述Chemical Mechanical Planarization (CMP) has emerged in the last two decades and grown rapidly as a basic technology widely used in semiconduc- tor device fabrication. As a semiconductor processing step, it was developed at IBM in the mid 1980s. From this beginning the technology has been widely adopted throughout the semiconductor industry. As basic CMP technology has been understood and accepted throughout the semiconductor industry, its uses in different parts of the semiconductor process have multiplied. This includes special steps for some special process- ing flows, such as for DRAM technology. In addition, the availability of CMP technology has enabled the implementation of new technologies, with the best example being copper interconnect technology. Copper could not be practi- cally implemented into semiconductor process flows until the advent of CMP. Unfortunately, the rapid acceptance and implementation of CMP technol- ogy in wafer fabrication has occurred without a corresponding rate of advance in the underlying science. Progress is being made in understanding the un- derlying CMP mechanisms, but, in general, it is slow and uneven. The most noteworthy exception to this tr
出版日期Book 2004
關(guān)鍵詞dielectrics; material; metals; reactions; semiconductor; semiconductor technology
版次1
doihttps://doi.org/10.1007/978-3-662-06234-0
isbn_softcover978-3-642-07738-8
isbn_ebook978-3-662-06234-0Series ISSN 0933-033X Series E-ISSN 2196-2812
issn_series 0933-033X
copyrightSpringer-Verlag Berlin Heidelberg 2004
The information of publication is updating

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5#
發(fā)表于 2025-3-22 12:38:54 | 只看該作者
CMP Cleaning,nology hurdles, the CMP clean must also target manufacturing requirements driven by cost of ownership considerations. It is no small wonder then that many different cleaning technologies, both complimentary and competitive, are found in semiconductor manufacturing facilities.
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D. W. Christianson,W. N. Lipscomby spin-on glass (SOG), reduce many of the problems of multi-level metal integration approaches, however SOG introduces additional difficulties of its own, and has been primarily used for two and three level metal structures [2].
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發(fā)表于 2025-3-22 21:58:54 | 只看該作者
Anthony Mittermaier,Erick Menesesreason the chapter is grouped into the major CMP process types: oxide, tungsten, STI and copper. There are other CMP processes, but these four areas cover most of the issues with the more uncommon processes, such as poly-silicon CMP.
9#
發(fā)表于 2025-3-23 01:46:26 | 只看該作者
CMP Technology,y spin-on glass (SOG), reduce many of the problems of multi-level metal integration approaches, however SOG introduces additional difficulties of its own, and has been primarily used for two and three level metal structures [2].
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發(fā)表于 2025-3-23 07:41:31 | 只看該作者
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