Titlebook: Chemical-Mechanical Planarization of Semiconductor Materials; Michael R. Oliver (Rodel Fellow) Book 2004 Springer-Verlag Berlin Heidelberg

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D. W. Christianson,W. N. Lipscombicate high performance multiple level metal structures. Specifically, after the first level of metal was fabricated, and a nearly conformal silicon dioxide interlevel dielectric (ILD) layer was deposited, the second level metal has several fabrication problems, including deposition, resist patternin

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Protein Structure — Function Relationship presumably due to the hardness and the relative inertness of tungsten. To overcome these difficulties, an oxidizer is incorporated in tungsten CMP slurries. Kaufman et al. [1] introduced the first widely accepted model of the tungsten CMP process; a part of that work included a model for the remova

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Morag A. Grassie,Graeme Milligan and incompatible with cleanroom processes, CMP has evolved into a critical process technology that includes not only the planarization step, but the post-CMP cleaning process as well. It is used not only in back end of the line interconnect processes, but is also used for critical process steps in

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