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Titlebook: Chemical-Mechanical Planarization of Semiconductor Materials; Michael R. Oliver (Rodel Fellow) Book 2004 Springer-Verlag Berlin Heidelberg

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樓主: sprawl
21#
發(fā)表于 2025-3-25 05:41:44 | 只看該作者
22#
發(fā)表于 2025-3-25 08:12:38 | 只看該作者
https://doi.org/10.1007/978-3-642-87969-2d from FEOL applications such as shallow trench isolation and polysilicon contacts to BEOL including planarization of dielectrics and conductors. From a CMP cleaning perspective, the ubiquitousness of CMP requires that cleaning technology is capable of cleaning a wide range of contaminants and mater
23#
發(fā)表于 2025-3-25 14:09:23 | 只看該作者
24#
發(fā)表于 2025-3-25 17:41:22 | 只看該作者
Anthony Mittermaier,Erick Menesesther step in semiconductor processing, the presence of any CMP step comes with a significant number of integration issues, and their associated performance tradeoffs. This chapter addresses those issues and tradeoffs. Though there are a number of integration issues that are common to all CMP steps,
25#
發(fā)表于 2025-3-25 23:45:35 | 只看該作者
Chemical-Mechanical Planarization of Semiconductor Materials978-3-662-06234-0Series ISSN 0933-033X Series E-ISSN 2196-2812
26#
發(fā)表于 2025-3-26 00:33:58 | 只看該作者
D. W. Christianson,W. N. Lipscomben-abled a greatly improved multi-level metallization integration approach. Once the technology was implemented into large scale manufacturing, both the hardware and the processes evolved by leaps and bounds. New processes were developed, with the second major application being tungsten polish.
27#
發(fā)表于 2025-3-26 07:37:43 | 只看該作者
28#
發(fā)表于 2025-3-26 09:43:19 | 只看該作者
https://doi.org/10.1007/978-3-662-06234-0dielectrics; material; metals; reactions; semiconductor; semiconductor technology
29#
發(fā)表于 2025-3-26 13:41:41 | 只看該作者
978-3-642-07738-8Springer-Verlag Berlin Heidelberg 2004
30#
發(fā)表于 2025-3-26 18:52:56 | 只看該作者
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