Titlebook: Chemical Bonds in Solids; Volume 3: X-Ray and N. N. Sirota Book 1972 Consultants Bureau, New York 1972 Atom.X-ray.band structure.band theo

存心

Experimental Determination of the Structure Amplitudes and of the Degree of Ionization in Gallium Phlate the Debye—Waller factors B, the characteristic temperatures Θ. the mean-square dynamic displacements U.., and the effective charges. The experimental values of the atomic scattering factors . were used to calculate the distribution of the electron density along the [111] direction in the lattice of Gap.

要控制

一罵死割除

Investigation of the Atomic Binding Forces in Mercury Telluride by the X-Ray Diffraction Methodture maxima and calculations of the characteristic temperatures and of the lattice period were used to obtain information on the nature of the dependence of the atomic forces on the concentration of mercury vacancies.

泥沼

萬花筒

Chemical and Knight Shifts in AIIIBV Compoundsle effect and the chemical shift had little influence on the resonance line shift, and that the influence of the Knight shift was greater. In this way, the ionic component of the chemical bonding was determined. A theoretical analysis confirmed the experimental results.

THROB

X-Ray Emission K Spectra of Silicon in Chromium Silicides a comparison of . of pure silicon and chromium silicides. The semiconducting properties of chromium disilicide may be due to the presence of a partially covalent bond. A comparison of the structures of CrSi and CrSi. indicates the identity of silicon atoms in the first coordination sphere.

煩憂

柔聲地說

小溪

Distribution of the Uncompensated Electron Density in the Ferromagnetic Manganese Compounds MnAs, Mnese compounds. The distribution of the density of uncompensated electrons, obtained from the Fourier transform of the magnetic form factor curves, gives an indication of the nature of the change in the amount of overlap of 3d electron shells and of the connection between physical properties and electron distribution.

phase-2-enzyme

Distribution of the Potential in the Gallium Phosphide Lattice00) planes of gallium phosphide crystals. It was found that the potential between the nearest Ga and P atoms rose to 15.21 V along the [111] direction. The average internal potential in gallium phosphide, deduced from experimental data, was 16.02 V, whereas the value calculated from the diamagnetic susceptibility was 14.5 V.