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Titlebook: Chemical Bonds in Solids; Volume 3: X-Ray and N. N. Sirota Book 1972 Consultants Bureau, New York 1972 Atom.X-ray.band structure.band theo

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發(fā)表于 2025-3-21 18:02:02 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱Chemical Bonds in Solids
副標(biāo)題Volume 3: X-Ray and
編輯N. N. Sirota
視頻videohttp://file.papertrans.cn/225/224292/224292.mp4
圖書(shū)封面Titlebook: Chemical Bonds in Solids; Volume 3: X-Ray and  N. N. Sirota Book 1972 Consultants Bureau, New York 1972 Atom.X-ray.band structure.band theo
描述The present four volumes, published under the collective title of "Chemical Bonds in Solids," are the translation of the two Russian books "Chemical Bonds in Crystals" and "Chemical Bonds in Semiconductors." These contain the papers presented at the Conference on Chemical Bonds held in Minsk between May 28 and June 3, 1967, together with a few other papers (denoted by an asterisk) which have been specially incorporated. Earlier collections (also published by the Nauka i Tekhnika Press of the Belorussian Academy of Sciences) were entitled "Chemical Bonds in Semiconductors and Solids" (1965) and "Chemical Bonds in Semiconductors and Thermody- namics" (1966) and are available in English editions from Consultants Bureau, New York (pub- lished in 1967 and 1968, respectively). The subject of chemical bonds in crystals, including semiconductors, has recently become highly topical and has attracted the interest of a wide circle of physicists, chemists, and engineers. Until recently, the most successful description of the properties of solids (including semi- conductors) has been provided by the band theory, which still dominates the physics of solids. Nevertheless, it is clear that the mos
出版日期Book 1972
關(guān)鍵詞Atom; X-ray; band structure; band theory; bonding; chemical bond; crystal; distribution; enthalpy; kinetics; m
版次1
doihttps://doi.org/10.1007/978-1-4684-1686-2
isbn_softcover978-1-4684-1688-6
isbn_ebook978-1-4684-1686-2
copyrightConsultants Bureau, New York 1972
The information of publication is updating

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Mean-Square Dynamic Displacements and Atomic Scattering Factors of Ions in Aluminum Nitride., radiation. These values were used to calculate the mean-square dynamic displacements and the atomic scattering factors of the Al and the N ions. The values of F. were used also to find the shortest relative distance (u. /c) between the Al and the N ions along the c axis. This distance was 0.386 ±
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X-Ray Spectroscopic Investigation of Chemical Bonding in Some Rare-Earth Titanatesin a focusing vacuum x-ray spectrometer using the fluorescent excitation method. The results obtained made it possible to analyze the valence of titanium in some rare-earth titanates. Use was made of the shift of the K. titanium lines, as well as of their width and asymmetry for different valence st
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Determination of the Degree of Ionicity of the Bonds in Some Compounds of Phosphorus from the Shift osphorus in the x-ray spectra of AIP, GaP, InP, ZnP., Zn.P., CdP., Cd.P., and P.O.. This method for the determination of the degree of ionicityis judged in relation to the proposed scheme of bonding in A.B. semiconductors. The bond ionicities obtained were (in %): 30 for AIP, 20 for GaP and InP, 40
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Investigation of the Carbon K and Metal Emission Bands and Bonding for Stoichiometric and Nonstoichipower grating spectrometer. It was found possible to relate the shape of the C K band to bonding. Groups IV and V transition metal carbides, which are strongly bonded carbides, have narrow C K bands. For the weakly bonded carbides, Group VI and higher, the C K bands are broad and have a shape close
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Chemical and Knight Shifts in AIIIBV Compoundsle effect and the chemical shift had little influence on the resonance line shift, and that the influence of the Knight shift was greater. In this way, the ionic component of the chemical bonding was determined. A theoretical analysis confirmed the experimental results.
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