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Titlebook: Ultra-Low Power Integrated Circuit Design; Circuits, Systems, a Nianxiong Nick Tan,Dongmei Li,Zhihua Wang Book 2014 Springer Science+Busine

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發(fā)表于 2025-3-28 15:25:44 | 只看該作者
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發(fā)表于 2025-3-28 19:10:52 | 只看該作者
43#
發(fā)表于 2025-3-29 02:42:09 | 只看該作者
Shupeng Zhong,Nianxiong Nick Tancone NCKX genes were localized to chromosomes 15q22 and 9p22, respectively. In situ hybridization localized the rod and cone NCKX transcripts in both human and chicken retinas: rod NCKX transcripts were found only in the inner segments of rods, whereas cone NCKX transcripts were found in a subset of
44#
發(fā)表于 2025-3-29 06:55:37 | 只看該作者
Liyuan Liu,Dongmei Li,Zhihua WangNote that in some specific applications the requirements on SLM parameters may lie beyond the ranges indicated here, because we give values for the sake of reference. However, if a real device has a set of parameters inferior to the lowest values, the extent of its applicability will be restricted f
45#
發(fā)表于 2025-3-29 08:20:30 | 只看該作者
Liming Chen,Yong Hei,Zenghui Yu,Jia Yuan,Jinyong Xuese in many optical holographic processing applications. As with all technologies based on advanced materials, the rate of progress in the development of photorefractive applications has been principally limited by the rate at which breakthroughs in materials science have supplied better photorefract
46#
發(fā)表于 2025-3-29 12:17:09 | 只看該作者
Hanjun Jiang,Nanjian Wu,Baoyong Chi,Fule Li,Lingwei Zhang,Zhihua Wangues, and applications in photorefractive crystals, particularly LiNbO.. After describing the physical model for thermal fixing, the recent mathematical formulation of the model has been presented. This has emerged as a coherent and clear picture from which particular models can be reliably developed
47#
發(fā)表于 2025-3-29 18:41:03 | 只看該作者
Kun Yang,Shupeng Zhong,Quan Kong,Changyou Men,Nianxiong Nick Tan-oxide semiconductors, and other optical elements. Thus, numerous elaboration methods are used to produce v-silica-based devices. For example, the techniques of vaporphase deposition (e.g., flame hydrolysis deposition (FHD), modified chemical vapor deposition (MCVD), plasma-enhanced chemical vapor d
48#
發(fā)表于 2025-3-29 22:31:20 | 只看該作者
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