| 書目名稱 | Ultra-Fast Silicon Bipolar Technology |
| 編輯 | Ludwig Treitinger,Mitiko Miura-Mattausch |
| 視頻video | http://file.papertrans.cn/941/940404/940404.mp4 |
| 叢書名稱 | Springer Series in Electronics and Photonics |
| 圖書封面 |  |
| 描述 | Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world- wide competition in fabricating metal-oxide-semiconductor field-effect of develop- transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi- cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum- marize the most recent developments and to discuss the future of bip- olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to- is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten- tial for future progress still existing in this field. This progress is char- acterized by the drive towards higher speed and lower power con- sum |
| 出版日期 | Textbook 1988 |
| 關(guān)鍵詞 | VLSI; circuit; epitaxy; integrated circuit; silicon; simulation; transistor |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-642-74360-3 |
| isbn_softcover | 978-3-642-74362-7 |
| isbn_ebook | 978-3-642-74360-3Series ISSN 0172-5734 |
| issn_series | 0172-5734 |
| copyright | Springer-Verlag Berlin Heidelberg 1988 |
|Archiver|手機(jī)版|小黑屋|
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