Titlebook: Semiconductor Interfaces at the Sub-Nanometer Scale; H. W. M. Salemink,M. D. Pashley Book 1993 Kluwer Academic Publishers 1993 Helium-Atom

上坡

Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfrison is made between results obtained on flat, unpinned surfaces and those from rough, pinned surfaces. In both cases, spectroscopic measurements are used to determine the position of the surface Fermi-level relative to the band edges. Band bending in the GaAs induced by the electric-field from the

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服從

Smear-out of the Ge/Si Interface in Gas Source MBE Monitored by Rheedm epitaxy (GSMBE) using disilane and germane, respectively. Reflection high energy electron diffraction (RHEED) intensity oscillation traces recorded during the growth of silicon on these layers showed a strong increase in growth rate for the first monolayers and a subsequent return to the value for

Incorporate

Interface Chemical Structure, Band Offsets and Optical Properties of Various III-V Compounds Heterosattice-matched heterostructures is presented. A strong asymmetry is observed and discussed in parallel with the chemical asymmetry, also related to In segregation, and with a recent tight-binding calculation of the VBO in this system, which shows a clear dependence on the interface chemistry

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