Titlebook: Semiconductor Interfaces at the Sub-Nanometer Scale; H. W. M. Salemink,M. D. Pashley Book 1993 Kluwer Academic Publishers 1993 Helium-Atom

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書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale影響因子(影響力)




書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale影響因子(影響力)學(xué)科排名




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書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale被引頻次




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書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale讀者反饋




書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale讀者反饋學(xué)科排名

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Dipole Layers at GaAs Heterojunctions and their Investigationinterface. We describe the control of the band discontinuities at InAs-GaAs junctions by δ-d oping in the GaAs, close to the interface, and by submonolayer quantities of Be grown right at the interface. The investigation of the barriers by ballistic electron emission microscopy is also described

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Semiconductor Interfaces at the Sub-Nanometer Scale978-94-011-2034-0Series ISSN 0168-132X

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A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemiccerning the preferred growth directions as a function of growth conditions. Finally I will discuss the question of selected area growth.In making the above comparisons I hope to highlight the key factors needed to assess the relative quality of the interfaces prepared by each technique

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