Titlebook: Semiconductor Device Reliability; A. Christou,B. A. Unger Book 1990 Kluwer Academic Publishers 1990 ASIC.CMOS.LED.Laser.Standard.Transisto

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A Review of the Reliability of III–V Opto-electronic Componentsphotodiodes for use in optical fibre transmission systems. Results are presented which show that these components are capable of the high reliability needed for telecommunications use, but that they are still vulnerable to a number of failure mechanisms. Reliability assessment, failure analysis and

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Considerations on the Degradation of DFB Lasersodes. The change in spectral characteristics during operation and the electric surge endurance level is also presented..The failure modes are similar to those of FP lasers. The degradation speed mainly depends on the injected current density and is affected by BH interface degradation. The median li

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Modelling the Effects of Degradation on the Spectral Stability of Distributed Feedback Lasersare presented of the effects on uniform grating and λ/4 phase shift DFB lasers of changes made in localised injected current density and in lifetime of carriers for linear non-radiative recombination. The aim of the work is to evaluate modelling as a technique for comparing the susceptibility of dif

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Gate Metallisation Systems for High Reliability GaAs MESFET Transistors and WSi.. The work carried out in this area will be reviewed and appraised. The basic interface has been characterised by the use of RBS and SIMS studies. More recent studies have been concerned with the use of these results in the fabrication and evaluation of transistor structures.

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The Influence of Temperature and Use Conditions on the Degradation of Led Parametersce of technology and manufacturer is presented. The quality and reliability of devices based on failure analysis are often more related to external causes than due to intrinsic reliability of the semiconductor.

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