Titlebook: Recent Advances in PMOS Negative Bias Temperature Instability; Characterization and Souvik Mahapatra Book 2022 Springer Nature Singapore Pt

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Device Architecture, Material and Process Dependencies of NBTI Parametric Drift,manium content in the channel, and mechanical stress in the channel due to changes in the transistor layout or device dimensions are discussed. The variability in parametric drift associated with small area devices is also discussed.

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BAT Framework Modeling of RMG HKMG GAA-SNS FETs, having different sheet dimensions (length and width). The changes in voltage acceleration and temperature activation for changes in the sheet dimensions are modeled. The calibrated BAT framework is used to determine the impact of dimension scaling on the extrapolated EOL degradation under use condition.

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BAT Framework Modeling of AC NBTI: Stress Mode, Duty Cycle and Frequency,features of AC kinetics are shown to be universal across Gate First HKMG p-MOSFETs and RMG HKMG SOI p-FinFETs having Silicon channel and RMG HKMG bulk p-FinFETs having Silicon Germanium channel. The controversy regarding the frequency dependence or independence of AC NBTI stress is analyzed and explained.

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Characterization of NBTI Parametric Drift,t methods developed to address the NBTI recovery-related challenges are reviewed, and the impact of measurement delay is discussed. The impacts of stress and recovery biases, temperature, pulse duty cycle and frequency are discussed. The extrapolated degradation at the end of life under normal opera

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