Titlebook: Recent Advances in PMOS Negative Bias Temperature Instability; Characterization and Souvik Mahapatra Book 2022 Springer Nature Singapore Pt

厭氧

書目名稱Recent Advances in PMOS Negative Bias Temperature Instability影響因子(影響力)




書目名稱Recent Advances in PMOS Negative Bias Temperature Instability影響因子(影響力)學(xué)科排名




書目名稱Recent Advances in PMOS Negative Bias Temperature Instability網(wǎng)絡(luò)公開度




書目名稱Recent Advances in PMOS Negative Bias Temperature Instability網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Recent Advances in PMOS Negative Bias Temperature Instability被引頻次




書目名稱Recent Advances in PMOS Negative Bias Temperature Instability被引頻次學(xué)科排名




書目名稱Recent Advances in PMOS Negative Bias Temperature Instability年度引用




書目名稱Recent Advances in PMOS Negative Bias Temperature Instability年度引用學(xué)科排名




書目名稱Recent Advances in PMOS Negative Bias Temperature Instability讀者反饋




書目名稱Recent Advances in PMOS Negative Bias Temperature Instability讀者反饋學(xué)科排名

Bernstein-test

消毒

https://doi.org/10.1007/978-981-16-6120-4NBTI; MOSFET; FDSOI; FinFET; GAA-SNS FET; Si channel; SiGe channel; HKMG; Layout; Dimension Scaling; mechanica

有特色

collagenase

,BTI Analysis Tool (BAT) Model Framework—Generation of Bulk Traps,libration is detailed. BAT is also used to determine the EOL degradation at use conditions in different devices. The BAT extrapolated EOL parametric drift is compared to empirical calculations (discussed in Chap.), and error associated with the latter is determined.

褲子

BAT Framework Modeling of Gate First HKMG Si and SiGe Channel FDSOI MOSFETs, silicon germanium channel devices, and its impact is also modeled. The mechanism responsible for the above process changes is explained. The calibrated BAT framework is used to estimate the extrapolated degradation at EOL under use condition for devices having different processes.

colloquial

FAWN

Override

BAT Framework Modeling of Gate First HKMG Si Channel MOSFETs,ess-recovery kinetics from multiple small area devices. The extrapolated degradation at EOL under use condition is estimated from the calibrated BAT framework and compared to the conventional regression-based empirical methods for devices having different gate insulator processes. The error associated with the empirical methods is estimated.

性上癮

BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs,d and explained. The extrapolated degradation at EOL under use condition is estimated by the calibrated BAT framework and compared to the conventional regression based empirical methods. The error associated with the empirical methods is estimated.