Titlebook: New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface; Lachlan E. Black Book 2016 Springer International Publishin

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Al,O, Deposition and Characterisation,options for the chemical precursor. The details of the more established ALD process are given briefly in Sect.?., where we also describe the general procedures used for sample preparation. Finally, in Sect.?. we describe the principal experimental techniques employed to characterise the samples.

時間等

Influence of Deposition Parameters, are the substrate temperature, the relative concentrations of the aluminium precursor and any additional reactants, and the precursor species itself. The following sections will describe the influence of each of these parameters in turn. The main results are presented in terms of . and .. Values for . and . are also presented when available.

Semblance

Conclusion, Al.O. passivation layers, enabling industrial application to photovoltaic devices. A summary of the major conclusions in each of these areas is given here. Further conclusions not mentioned here may be found in the final sections of Chaps.?.–..

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2190-5053 rfaces and semiconductor surface recombination mechanisms.Re..The book addresses the problem ofpassivation at the surface of crystalline silicon solar cells. Morespecifically, it reports on a high-throughput, industrially compatibledeposition method for Al2O3, enabling its application to commercial

急性

Introduction,mercial solar cell design, illustrating how increasing recombination significantly reduces cell efficiency. The effective suppression of surface recombination, referred to as surface “passivation” is thus essential to the realisation of high-efficiency photovoltaic devices.

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