Titlebook: New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface; Lachlan E. Black Book 2016 Springer International Publishin

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Effect of Surface Dopant Concentration,The effectiveness of Al.O. surface passivation depends not only on the processing history of the film, but also on the properties of the semiconductor surface on which it is deposited. In this chapter we examine the influence of surface dopant type and concentration on the recombination rate at Al.O.-passivated surfaces.

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,Effect of Surface Orientation and?Morphology,Besides the dopant concentration, the major surface properties which may influence passivation quality are crystalline orientation and morphology.

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割公牛膨脹

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https://doi.org/10.1007/978-3-319-32521-7Surface Recombination Theory; Passivation Performance; Passivating Dielectrics; Deposition of Al2O3; Atm

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2190-5053 ough a comprehensivestudy, which moves from the particular, the case of aluminium oxide on silicon,to the general, the physics of surface recombination, and is able to connecttheory with practice, highlighting relevant commercial applications...978-3-319-81307-3978-3-319-32521-7Series ISSN 2190-5053 Series E-ISSN 2190-5061

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Book 2016physics of Al2O3 as apassivating dielectric for silicon surfaces. This is accomplished through a comprehensivestudy, which moves from the particular, the case of aluminium oxide on silicon,to the general, the physics of surface recombination, and is able to connecttheory with practice, highlighting relevant commercial applications...

背書(shū)

Book 2016ndustrially compatibledeposition method for Al2O3, enabling its application to commercial solar cells.One of the main focus is on the analysis of the physics of Al2O3 as apassivating dielectric for silicon surfaces. This is accomplished through a comprehensivestudy, which moves from the particular,