Titlebook: Nanoscale Redox Reaction at Metal/Oxide Interface; A Case Study on Scho Takahiro Nagata Book 2020 National Institute for Materials Science,

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Bias-Induced Interfacial Redox Reaction in Oxide-Based Resistive Random-Access Memory Structure,hard X-ray photoelectron spectroscopy under bias operation. We demonstrated resistance switching for nonvolatile memory applications using a polycrystalline HfO. film with a Cu top electrode, and revealed the diffusion of Cu into the HfO. layer during the filament formation process. Resistive switch

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Switching Control of Oxide-Based Resistive Random-Access Memory by Valence State Control of Oxide,tions. As summarized in Chap.?., the density of oxygen vacancies is important in terms of controlling the conductive filament formation and switching of a nanoionic-type ReRAM structure. In this chapter, as an example of the control of oxygen vacancies and switching properties of the ReRAM structure

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NIMS Monographshttp://image.papertrans.cn/n/image/660951.jpg

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General Summary,In this book, the research topics concerns the oxide thin-film materials for the electronics device applications, which were performed by author’s grouped at NIMS.

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Takahiro NagataDescribes the use of interface control to maximize the potential of materials in nanoscale phenomena.Introduces the combinatorial synthesis method for thin film growth used in the optimization of nume

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