| 書(shū)目名稱 | Nanoscale Redox Reaction at Metal/Oxide Interface |
| 副標(biāo)題 | A Case Study on Scho |
| 編輯 | Takahiro Nagata |
| 視頻video | http://file.papertrans.cn/661/660951/660951.mp4 |
| 概述 | Describes the use of interface control to maximize the potential of materials in nanoscale phenomena.Introduces the combinatorial synthesis method for thin film growth used in the optimization of nume |
| 叢書(shū)名稱 | NIMS Monographs |
| 圖書(shū)封面 |  |
| 描述 | .Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.??.The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications..In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.. |
| 出版日期 | Book 2020 |
| 關(guān)鍵詞 | Combinatorial Synthesis; Metal/oxide Interface; Plasma Surface Treatment; Resistive Random Access Memor |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-4-431-54850-8 |
| isbn_softcover | 978-4-431-54849-2 |
| isbn_ebook | 978-4-431-54850-8Series ISSN 2197-8891 Series E-ISSN 2197-9502 |
| issn_series | 2197-8891 |
| copyright | National Institute for Materials Science, Japan 2020 |
|Archiver|手機(jī)版|小黑屋|
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