Titlebook: Nanoscale Memory Repair; Masashi Horiguchi,Kiyoo Itoh Book 2011 Springer Science+Business Media, LLC 2011 Embedded Systems.Integrated Circ

gentle

鞠躬

簡(jiǎn)略

頌揚(yáng)本人

Musket

STAT

Error Checking and Correction (ECC),are stored in a memory cell, a nonbinary linear code is more suitable, where each element may be not only “0” or “1” but also another value. What values should be used in addition to “0” and “1”? The answer is given by a set called ..

CT-angiography

Entirety

Reduction Techniques for Margin Errors of Nanoscale Memories,ltage . . (i.e., . .) of MOSFETs needed to keep the subthreshold leakage low. Although many intensive attempts to reduce . . through reducing leakage have been made since the late 1980s [4–6], . . is still not low enough to reduce . . to the sub-1 V region.

胡言亂語(yǔ)

cuticle