| 書(shū)目名稱(chēng) | Nanoscale Memory Repair |
| 編輯 | Masashi Horiguchi,Kiyoo Itoh |
| 視頻video | http://file.papertrans.cn/661/660943/660943.mp4 |
| 概述 | Presents the first comprehensive reference to reliability and repair techniques for nano-scale memories.Covers both the mathematical foundations and engineering applications of yield and reliability i |
| 叢書(shū)名稱(chēng) | Integrated Circuits and Systems |
| 圖書(shū)封面 |  |
| 描述 | Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors’ long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability. |
| 出版日期 | Book 2011 |
| 關(guān)鍵詞 | Embedded Systems; Integrated Circuit Design; Memory Reliability and Repair; Nanoscale Memory; Soft Error |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-1-4419-7958-2 |
| isbn_softcover | 978-1-4614-2794-0 |
| isbn_ebook | 978-1-4419-7958-2Series ISSN 1558-9412 Series E-ISSN 1558-9420 |
| issn_series | 1558-9412 |
| copyright | Springer Science+Business Media, LLC 2011 |
|Archiver|手機(jī)版|小黑屋|
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