Titlebook: Metal Impurities in Silicon- and Germanium-Based Technologies; Origin, Characteriza Cor Claeys,Eddy Simoen Book 2018 Springer International

把…比做

Electrolysis

Source of Metals in Si and Ge Crystal Growth and Processing,s step, requiring regular metal contamination monitoring. While the lowering of the thermal budget has reduced the occurrence of contamination, fast diffusing metals can still penetrate the semiconductor material. Finally, the use of metal layers and its impact on metal contamination is highlighted in the last section of this chapter.

Gleason-score

Impact of Metals on Silicon Devices and Circuits,be obtained. In forward operation, excess recombination mediated by metal-related deep levels gives rise to an ideality factor between 1 and 2. A third part considers the impact on transistors and circuits, including CCDs and CMOS Imager Sensors (CIS).

思想流動

工作

stress-response