Titlebook: Metal Impurities in Silicon- and Germanium-Based Technologies; Origin, Characteriza Cor Claeys,Eddy Simoen Book 2018 Springer International

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Source of Metals in Si and Ge Crystal Growth and Processing,taminants from the wafer surface, can actually deposit metals, depending on a number of parameters. Optimal cleaning recipes for both Si and Ge wafers are discussed. Alternatively, one can consider dry vapor phase cleaning. Photoresist deposition and stripping is another source of metal contaminatio

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Electrical Properties of Metals in Si and Ge, some of the process steps (e.g. as silicides, metal layers, diffusion barrier, hard masks, gate dielectric etc.). The risk that they act as a contaminant degrading the device properties has to be minimized but can in some cases not be avoided. Sections .–. discuss the behavior and properties of nic

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Impact of Metals on Silicon Devices and Circuits,resence of metal centers in a MOS capacitor will be described. Both dissolved atoms and precipitates can cause deleterious effects on the MOS characteristics, giving rise to excess gate leakage, hysteresis and instability and in the worst case, early breakdown (failure). A second part will have a lo

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Gettering and Passivation of Metals in Silicon and Germanium, type of synopsis and to focus on the understanding and the new insights that have been obtained since the beginning of the century. First some general aspects about gettering strategies are discussed, giving a schematic overview of different gettering approaches, before outlining the main gettering

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l risk assessment. The basic idea was to assume that human health risks were directly proportional to some suitably defined exposure metric. In symbols: Risk = K × Exposure, where “Exposure” would be defined in978-1-4419-3850-3978-0-387-26118-8Series ISSN 0884-8289 Series E-ISSN 2214-7934

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Cor Claeys,Eddy Simoenl risk assessment. The basic idea was to assume that human health risks were directly proportional to some suitably defined exposure metric. In symbols: Risk = K × Exposure, where “Exposure” would be defined in978-1-4419-3850-3978-0-387-26118-8Series ISSN 0884-8289 Series E-ISSN 2214-7934

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