Titlebook: Low-Dimensional Structures in Semiconductors; From Basic Physics t A. R. Peaker,H. G. Grimmeiss Book 1991 Springer Science+Business Media N

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Basic Optical Properties of Low Dimensional Structures for Applications to Lasers, Electro-Optic andplications. As this field has already reached immense dimensions and is still growing very fast, we only cover some very fundamental items, most of them of universal use in LDS’s, with illustrations only in the directgap type I quantum well, examplified by the GaAs/GaAlAs system. We have chosen to c

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Hot Electron Devices, which traverses a thin GaAs region to be eventually collected and energy analyzed. As the hot electrons traverse the device they are used to probe: scattering events, band nonparabolicity, size quantization effects, intervalley transfer, quantum mechanical reflections, and band discontinuities at

Inkling

Hot Electrons and Degradation Effects in FET Devicesshown that light emission from the hot electrons provides a measurement of their energy distribution. We discuss degradation effects and show how the spatial location of inferface defects may determined.

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傷心

H. G. Grimmeiss,M. Kleverman,J. Olajos,P. Omling,V. Nagesh

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hardheaded

Metal Organic Vapour Phase Epitaxy for the Growth of Semiconductor Structures and Strained Layerser diodes. These devices are multiple layer structures with a thin waveguide region contained between layers of larger bandgap and different refractive index (for confinement of carriers and radiation, respectively, in the active region). A basic laser diode chip consists of two parallel facets, (11

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Concepts and Applications of Band Structure Engineering in Optoelectronics alloy composition and band gap. A similar linear relation exists between the gap and the lattice constant. Semiconductor heterostructures offer a different way of achieving changes in band gap. When a thin layer of, say, GaAs is sandwiched between layers of Ga.Al.As, the larger gap material (the al