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Titlebook: Low-Dimensional Structures in Semiconductors; From Basic Physics t A. R. Peaker,H. G. Grimmeiss Book 1991 Springer Science+Business Media N

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書目名稱Low-Dimensional Structures in Semiconductors
副標題From Basic Physics t
編輯A. R. Peaker,H. G. Grimmeiss
視頻videohttp://file.papertrans.cn/589/588858/588858.mp4
叢書名稱NATO Science Series B:
圖書封面Titlebook: Low-Dimensional Structures in Semiconductors; From Basic Physics t A. R. Peaker,H. G. Grimmeiss Book 1991 Springer Science+Business Media N
描述This volume contains a sequence of reviews presented at the NATO Advanced Study Institute on ‘Low Dimensional Structures in Semiconductors ... from Basic Physics to Applications.‘ This was part of the International School of Materials Science and 1990 at the Ettore Majorana Centre in Sicily. Technology held in July Only a few years ago, Low Dimensional Structures was an esoteric concept, but now it is apparent they are likely to playa major role in the next generation of electronic devices. The theme of the School acknowledged this rapidly developing maturity.‘ The contributions to the volume consider not only the essential physics, but take a wider view of the topic, starting from material growth and processing, then prog- ressing right through to applications with some discussion of the likely use of low dimensional devices in systems. The papers are arranged into four sections, the first of which deals with basic con- cepts of semiconductor and low dimensional systems. The second section is on growth and fabrication, reviewing MBE and MOVPE methods and discussing the achievements and limitations of techniques to reduce structures into the realms of one and zero dimensions. The t
出版日期Book 1991
關(guān)鍵詞Phase; electrons; integrated circuit; laser; materials science; optoelectronics; semiconductors
版次1
doihttps://doi.org/10.1007/978-1-4899-0623-6
isbn_softcover978-1-4899-0625-0
isbn_ebook978-1-4899-0623-6Series ISSN 0258-1221
issn_series 0258-1221
copyrightSpringer Science+Business Media New York 1991
The information of publication is updating

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Impurities in Semiconductorshe application of methods other than junction space charge techniques (JSCT). Chalcogens and several transition metals in silicon are used as examples in order to show how important parameters and properties of defects can be revealed by using spectroscopic methods. One of the methods, namely photot
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Metal Organic Vapour Phase Epitaxy for the Growth of Semiconductor Structures and Strained Layerstransistors were fabricated from germanium, later from silicon. It was soon realized that also the A.–B. or A. – B. materials (most often simply termed III–V or II–VI materials) exhibited semiconductive behaviour. The energy difference between the valence band and the conduction band made them candi
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Chemical Interfaces: Structure, Properties and Relaxation properties of materials by the creation of interfaces. ‘Band gap engineering’, the attempt to tailor the electronic properties of semiconductors by interleaving many dissimilar layers is an extreme example of this approach. Technologically most advanced and thus most widely used are interfaces betw
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Capacitance-Voltage Profiling of Multilayer Semiconductor Structures heterojunction band offsets [1]. It has been recognised [2] that a profile of the free electron concentration n(x) is obtained from C-V techniques rather than that of the doping profile N.(x). These are not necessarily the same even for the case of very shallow donors. Indeed, they will be differen
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