找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Lipids in Health and Disease; Peter J. Quinn,Xiaoyuan Wang Book 2008 Springer Science+Business Media B.V. 2008 Activation.Lipid.Metabolism

[復(fù)制鏈接]
樓主: Forbidding
21#
發(fā)表于 2025-3-25 06:12:08 | 只看該作者
Jing X. Kang,Karsten H. Weylandtdamaged Si layer (160 keV O., 1 x 10./cm., 300 K) by subsequently applying intense ionization from more deeply penetrating but nondamaging electron irradiations (5-20 keV e., 7.5 . 10./cm. 260-280 K). The samples used had been bulk doped with substitutional aluminum (A?.). EPR of the aluminum inters
22#
發(fā)表于 2025-3-25 10:32:49 | 只看該作者
23#
發(fā)表于 2025-3-25 12:09:13 | 只看該作者
Joy L. Little,Steven J. Krideldamaged Si layer (160 keV O., 1 x 10./cm., 300 K) by subsequently applying intense ionization from more deeply penetrating but nondamaging electron irradiations (5-20 keV e., 7.5 . 10./cm. 260-280 K). The samples used had been bulk doped with substitutional aluminum (A?.). EPR of the aluminum inters
24#
發(fā)表于 2025-3-25 16:48:44 | 只看該作者
he framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials s
25#
發(fā)表于 2025-3-25 23:21:10 | 只看該作者
Mikhail Bogdanov,Eugenia Mileykovskaya,William Dowhanhe framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials s
26#
發(fā)表于 2025-3-26 01:48:38 | 只看該作者
Rao Muralikrishna Adibhatla,J. F. Hatcherestinghouse Electric Corporation. The ion beam energy can be varied from 30 KeV to 185 KeV at currents up to 10 ma. The beam optics can vary the spot size at the target from <1 cm. to 100 cm.. The beam can be direct or analyzed. The final lens is after the analyzer and before the post accelerator. T
27#
發(fā)表于 2025-3-26 07:32:27 | 只看該作者
Tetsuji Mutoh,Jerold Chunestinghouse Electric Corporation. The ion beam energy can be varied from 30 KeV to 185 KeV at currents up to 10 ma. The beam optics can vary the spot size at the target from <1 cm. to 100 cm.. The beam can be direct or analyzed. The final lens is after the analyzer and before the post accelerator. T
28#
發(fā)表于 2025-3-26 11:20:09 | 只看該作者
29#
發(fā)表于 2025-3-26 13:04:17 | 只看該作者
30#
發(fā)表于 2025-3-26 19:09:42 | 只看該作者
Gilbert O. Fruhwirth,Albin Hermetter marked after trypsin treatment. White membranes isolated from mutant strains do not stack and exhibit an average size consistent with previous results of electron microscopy. White membrane fragments also do not exhibit stacking . after retinal reconstitution or trypsin treatment. Quasi-elastic lig
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點評 投稿經(jīng)驗總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-12 01:47
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
开江县| 玛曲县| 汝城县| 西乌珠穆沁旗| 外汇| 铜梁县| 游戏| 岗巴县| 柳河县| 吉隆县| 南京市| 神池县| 浦北县| 娱乐| 肥西县| 镇雄县| 灌南县| 临沂市| 金平| 德江县| 屯留县| 会昌县| 大方县| 华宁县| 天津市| 黑龙江省| 饶平县| 清水县| 涞水县| 南木林县| 彰化县| 龙江县| 晋城| 东兴市| 乐山市| 保山市| 兴化市| 石首市| 安乡县| 平舆县| 镇平县|