Titlebook: Ion Implantation in Semiconductors; Science and Technolo Susumu Namba Book 1975 Springer Science+Business Media New York 1975 ESR.Plantatio

乞討

Encapsulation of Ion Implanted GaAsElectrical activity from donor ions implanted into GaAs has only been achieved after a post implantation anneal cycle to temperatures in excess of 650°C. SiO. coatings have proved unsatisfactory whilst Si.N. layers are good up to at least 750°C. From preliminary measurements Ga.O. films also show promising characteristics.

音的強弱

Ion Implantations of Mg and Zn into n-Type GaPMeasurements of Hall-effect and sheet-resistivity and of depth of pn junction were carried out to make an electrical evaluation of p-type layer formed in GaP by either Mg or Zn ion implantation. Photoluminescence spectra were also measured for the implanted GaP both at room temperature and at 100 °K.

PURG

dominant

Anodic Oxidation and Profile Determination of Ion Implanted Semi-Insulating GaAs Te and Si implanted profiles in semi-insulating GaAs. The samples were implanted at 350°C and encapsulated in Si.N. for anneal at temperatures up to 900°C Differential Hall measurements indicated strong deviations from predicted Gaussian profiles and maximum carrier concentrations below 10. cm..

遭遇

Implantation of Silicon Into Gallium Arsenidegh electron concentration. The dependence of sheet resistivity, surface carrier concentration and mobility on dose, implantation temperature and annealing temperature was determined. Peak doping levels are about 3x10... for 340°C implantation with 10.cm. dose. Diffusion of implanted silicon was also confirmed.

Receive

The Effects of Ion-Implanted Ga, As, and P on the Subsequent Diffusion of Ion-Implanted Zn in GaAs0., and P prior to annealing. In particular, the diffusion rate of the implanted Zn during the anneal can be strongly inhibited by the co-implantation of As or P, whereas Ga implantation has only a minor effect.

鞭打

Compensating Layers in GaAs by Ion Implantation: Application to Integrated Opticsa few examples of optical waveguides in near IR region realized by H. implantation and we discuss the using 0. implanted layers to realize light guides as the compensation at high anneal temperatures is stable.

吹牛需要藝術(shù)

Electrical Properties of Proton Bombarded N-Type GaAsckness of the semi-insulating layer produced by the bombardments is nearly equal to the projected proton range. Prom Hall-effect measurements, it is found that the donor level of 0.15 eV is created by proton bombardments.

玉米

附錄

http://image.papertrans.cn/i/image/475173.jpg