Titlebook: Ion Implantation in Semiconductors; Science and Technolo Susumu Namba Book 1975 Springer Science+Business Media New York 1975 ESR.Plantatio

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Book 1975antation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Pa

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結(jié)構(gòu)

Large Increase of Emission Efficiency in Indirect GaAsP by N-Ion Implantationne. In the measurement at 77K integrated intensity of lightly implanted samples exceeds 1000 times as large as that of unimplanted one. Emission intensity becomes nearly the same order as that of direct GaAsP. This is attributed to the emission due to the NN line.

Anthrp

Behaviors of Ga and P Damages Introduced by Ion-Implantation into GaPses. Moreover, .C implanted GaP showed p-type conductivity and carrier concentration also tended to become higher with decrease of doses. And these results supported our expectation that electrical properties of amphoteric impurities in GaP could be controlled, using damage difference between Ga and P caused by ion-implantation.

枯萎將要

Photoluminescence of Zinc Implanted n-Type GaAseatment. Compensation of thermally induced Ga-vacancies by implanted Zn atoms plays a dominant role in the recovery process. In-depth variation of photoluminescence spectrum was also studied by succesively etching the implanted surface. This technique was found very useful for profiling implanted atoms and vacancies.

epidermis

Electrical and Photoluminescent Properties of Zinc Implanted GaAs0.62P0.38iously reported abnormally high electrical activities (~300% at 800°C) were not observed. A close correlation between photoluminescence intensity and effective surface carrier concentration was found. Qualitative explanation of annealing behaviors is presented.

extinct

Monolithic

The Effects of Ion Dose and Implantation Temperature on Enhanced Diffusion in Selenium Ion-Implantedtroduced by implantation; one is dominant at low doses and responsible for a broad band emission centered at 1.31 eV, and the another is Ga vacancy-Se donor complex, which is increased with dose and affects the enhanced diffusion. It is suggested that the broad band at 1.31 eV is attributed to As vacancy.

Observe

ESR Studies of Annealing Behavior of Nitrogen-Implanted GaP700 or 750 °C anneal, the hyperfine spectrum of the implanted N. (with illumination at 5180 or 7050 A at 4.2 K) which is evidenced 3 lines centered about a g-value of 2.017, and the spectrum due to the secondary defects of which g-value is 2.0030 ± 0.0004 and ΔHms1~6 gauss have been detected.