Titlebook: Ion Beams in Nanoscience and Technology; Ragnar Hellborg,Harry J. Whitlow,Yanwen Zhang Book 20101st edition Springer-Verlag Berlin Heidelb

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Basics of Ion Scattering in Nanoscale Materialsollision leads to a slowing down of the moving projectile and also a deflection of the trajectory that gives rise to the term ., which is often used synonymously to describe the energy transfer process.

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Box 4: Interatomic Potentialal interatomic potentials makes it possible to simulate much larger systems (～ up to a few million atoms) for much longer times (～100?ns), and thus to tackle such problems as plastic deformation, ion-solid interaction, or atomic diffusion.

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Thin Film Characterisation Using MeV Ion Beamsiffusion barriers, and silicide contacts need to be analysed with a depth resolution even better than a nanometre. This together with new film deposition techniques like atomic layer deposition (ALD) [1] have given a push to the ion beam analysis community to develop new and better techniques using energetic (>0.5?MeV) ion beams.

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Box 6: Nanoscale Defectsr structure, which affects either their crystalline, electronic or optical properties. It is common to attribute a negative connotation to the presence of defects. However, a perfect silicon crystal or any other defect-free semiconductor would have a limited functionality and might even be useless.

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Surface Modification Using Reactive Landing of Mass-Selected Ionshat occur during ion-surface collisions have been extensively reviewed [9–11]. These include physisorption or ion deposition, elastic and inelastic scattering, chemical reactions, charge exchange, sputtering, and ion implantation.

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Box 3: Ion Rangestopping finally dominates the slowing-down process. During the collision processes, target atoms (target recoils), which receive significant recoiling energies from the ion, will be removed from their lattice positions and produce a cascade of further collisions in the target.

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Computer Simulation Methods for Defect Configurations and Nanoscale Structureson, dopant diffusion, and dopant–defect interactions. These defects and nanoscale structures generated by ion–solid interaction prevent the electrical activation of the implanted dopant atoms and can affect the performance of semiconductor-based devices.

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Box 7: Diagnostic Ion Beam Luminescenceuence the emission spectra. Signals respond both to original and new defects as well as structures formed during ion implantation. Defect studies are notoriously difficult, as they are always a combination of intrinsic and impurity effects. Current interpretations of defects recognise that many of these features are interlinked.