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Titlebook: Integrated Nanoelectronics; Nanoscale CMOS, Post Vinod Kumar Khanna Book 2016 Springer India 2016 Nano-scale Engineering Applications.Nanob

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樓主: 復(fù)雜
31#
發(fā)表于 2025-3-27 00:39:13 | 只看該作者
Vinod Kumar KhannaProvides a cohesive understanding of inter-related nanotechnology disciplines such as nanoelectronics, nanomagnetics, nanophotonics, nanomechanics and nanobiotechnology.Addresses borderline and overla
32#
發(fā)表于 2025-3-27 01:40:01 | 只看該作者
33#
發(fā)表于 2025-3-27 05:19:45 | 只看該作者
Book 2016specific discipline. The book lays special emphasis on nanoelectronics since this field has advancedmost rapidly amongst all the nanotechnology disciplines and with significant commercial pervasion. In view of the significant impact that nanotechnology is predicted to have on society, the topics and
34#
發(fā)表于 2025-3-27 12:20:02 | 只看該作者
Nanomaterials and Their Propertiesr than that of the bulk semiconductor. Dependence of bandgap on nanocrystal size leads to emission of light of different wavelengths from these quantum dots. In metals, interaction of light with surface plasmons leads to resonance oscillations at particular frequencies, thereby producing different c
35#
發(fā)表于 2025-3-27 16:11:05 | 只看該作者
36#
發(fā)表于 2025-3-27 17:53:48 | 只看該作者
Tunnel Diodes and Field-Effect Transistors to bring out the dissimilarity between a tunnel diode and a resonant tunnel diode. Advantages, limitations and applications of resonant tunnel diodes in digital logic circuits and other areas are elaborated. The tunnel FET is proposed as an alternative to MOSFET. It is based on band-to-band tunneli
37#
發(fā)表于 2025-3-27 23:02:58 | 只看該作者
Tunnel Junction, Coulomb Blockade, and Quantum Dot Circuitich tunneling occurs. The tunnel junction is modeled as an ideal capacitor with a parallel-connected tunnel resistance whose value must be??4.2?kΩ for Coulomb blockade to become recognizable. The capacitor of the tunnel junction behaves in a different way from a normal capacitor. Upon excitation by
38#
發(fā)表于 2025-3-28 05:55:43 | 只看該作者
Single Electronicsiarized with voltage-based logic and charge-based logic used with SETs. Restrictions on increasing the low voltage gain of SETs are discussed. Elimination of the requirement of separately fabricating complementary SETs is both an advantage and a disadvantage. Difficulties faced in straightway adopti
39#
發(fā)表于 2025-3-28 07:11:15 | 只看該作者
1434-4904 s advancedmost rapidly amongst all the nanotechnology disciplines and with significant commercial pervasion. In view of the significant impact that nanotechnology is predicted to have on society, the topics and978-81-322-3870-6978-81-322-3625-2Series ISSN 1434-4904 Series E-ISSN 2197-7127
40#
發(fā)表于 2025-3-28 14:30:14 | 只看該作者
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